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ZnO, Zinc Oxide Crystal
ZnO, Zinc Oxide is a single crystal semiconductor with very interesting properties. ZnO's bandgap is in the 3.4 eV range which makes it attractive for many of the blue and violet applications in opto-electronics as well as UV devices. It is available in bulks, in wafers of up to 2 inches. ZnO has advantage over Gallium Nitride and other group III Nitrides.
ZnO has the potential to become the substrate material of choice for GaN. Like GaN, ZnO has a wurtzite structure, with lattice constants closely matched to GaN (a=3.249, c=5.205). ZnO is exactly lattice matched to InGaN with a 22% In content. ZnO is a soft compliant material that is believed to probably and may take up the lattice stress in preference to the growing GaN layer. ZnO dissociates in ammonia at temperatures above 600 deg.C. With its wide bandgap, Zinc Oxide could prove very useful in optical applications as well as many high speed electronics. ZnO may also be used as a substrate for epitaxial growth.
Physical Properties
Unit cell constant: a=3.252 Å, c=5.313 Å
Density: 5.7(g/cm3)
Hardness: 4(mohs)
Melt point: 1975 deg.C
Thermal expansion: 6.5 x 10-6 /deg.C //a, 3.7 x 10-6 /deg.C //c
Planned constant: 1200 mv/k @ 300 deg.C
Thermal conductivity: 0.006 cal/cm/k
Through scope: 0.4-0.6 μm > 50% at 2mm
General Specifications
Size(mm): 25x25x0.5mm,10x10x0.5mm,10x5x0.5mm,5x5x0.5mm
special size and orientation are available upon request
Surface rough: Surface roughness(Ra):<=5Å
Polishing: Single or double sides
Pack: 100 clean bag,1000 exactly clean bag