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E-O Crystal for Pockels Cells
Phase modulators - Electro-Optic crystal are used as phase modulators in interferometric system and in laser frequency stabilization schemes, e.g. with the Pound–Drever–Hall method
Polarization Modulators - Depending on the E-O crystal orientation and the direction of the applied electric field, the phase delay can depend on the polarization direction. E-O crystal Pockels cells can thus be seen as a voltage-controlled waveplate, modulating the polarization state.
Amplitude Modulators - Combined with polarizers, E-O crystal polarization modulator can be used as an amplitude modulator:
-Modulating the power of a laser beam, e.g. for laser printing,
high-speed digital data recording, or high-speed optical communications;
-Q switching of solid-state lasers (where the EOM serves to
block the laser resonator before the pulse is to be emitted);
-Active mode locking (where the EOM modulates the resonator
losses or the optical phase with the round-trip frequency or a multiple
thereof);
-Switching pulses in pulse pickers, regenerative amplifiers
and cavity-dumped lasers
Thermally Compensated Devices - Various types of multi-crystal designs are used for compensation of thermally induced birefringence effects and spatial walk-off.
Electro-Optic Waveguide - Integrated optical traveling-wave modulators are often used in microwave gigahertz region. Both microwave and laser beam propagate along waveguide at same phase velocities.
LiNbO3 Pockels- non-hygroscopic- damage threshold 300MW/cm² @1064 nm 10 ns - half-wave voltage 1.7 KV 4x4x20 mm @1064 nm - transmission 400 nm to 4000 nm - because piezoelectric ringing can be severe, piezoelectrically damped designs can be very helpful. - optical modulation and Q-switching of infrared wavelengths |
KD*P Pockels Cells- economically priced- large aperture available - transmission from 400 nm to 1100 nm - damage threshold: 1 GW/cm² @1064 nm 10 ns - half-wave voltage 6 KV @1064 nm, longitudinal mode - Q-switching of the laser cavity - cavity dumping |
RTP Pockels Cells- no piezoelectric ringing and hotorefractive damage at high peak power for frequency up to 100 kHz- thermal compensating design - high damage threshold 1 GW/cm² @1064 nm 10 ns - non-hygroscopic - transmission 400 nm to 2500 nm - half-wave voltage 1.8 KV 4x4x20 mm @1064 nm - Q-switch at high repetition rates, high-peak-power laser |
KTP Pockels Cells- high-polarization-extinction ratio- low dynamic half-wave voltage - free from acoustic ringing - damage threshold 500 MW/cm² @1064 nm 10 ns - wide optical bandwidth (>15 GHz) - transmission 400 nm to 2500 nm - half-wave voltage 1.3 KV 4x4x20 mm @1064 nm - high repetition rate regenerative amplifiers - E-O modulators |
BBO Pockels Cells- high damage threshold, 150 W CW with water cool, 5GW/cm² @1064 nm 10 ns- no piezoelectric ringing for frequency up to 30 kHz - broad trasmission range from 200 nm to 2000 nm - high temperature stability - half-wave voltage 9.3KV 4x4x20 mm @1064 nm - high repetition rate DPSS Q-switch - high repetition rate regenerative amplifier control - cavity dumping - beam chopper |
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E-O Crystal Specifications
Scratch/Dig( MIL-O-13830A):20-10 or better
Transmitted wavefront distortion:better than λ/4 @ 633nm
Dimension tolerance:Width ±0.1 Height ±0.1 Length ±0.1 mm
Clear aperture: over 90% central diameter
Parallelism: < 20 arc sec
Perpendicularity: <5 arc min.
Angle tolerance: < 0.5 deg.
Electrodes: Gold coating
Contrast ratio: >30dB @ 633 nm
AR-coating: BBAR coating R< 0.25% at center wavelenth
E-O Crystal Order Information
OptoCity offer E-O crystal for pockels cells at very competitive price. Electrodes, temperature stabilized mounts for E-O crystals are also available. Please send us an email to request for quote.