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AgGaS2 NLO Crystal for IR Laser

AgGaS2 is among the few nonlinear crystals that can be used for middle and deep infrared applications. It exhibits transparency in the range of 0.53 to 12 µm. AgGaS2 crystal has a large effective optical nonlinearity, a broad spectral acceptance, and a wide angular acceptance. Infrared laser between 3 to 12µm can be generated via Nd:YAG pumped OPO and DFG with diode and Ti:Sapphire lasers.

AgGaS2 Crystal

AgGaS2 crystal (AGS) can be used in OPOs that pumped by Nd:YAG laser; in numerous difference frequency mixing experiments with diode, Ti:Sapphire, Nd:YAG and IR dye lasers covering 3–12 µm range; in direct infrared countermeasure systems, and for SHG of CO and CO2 laser. Thin AgGaS2 crystal plates are popular for ultrashort pulse generation in mid IR range by difference frequence generation employing NIR wavelength pulses.

Properties of AgGaS2 Crystal

Chemical Formula:
AgGaS2
Crystal Structure:
Tetragonal, point group 42m
Lattice Parameter:
a=b=5.757Å c=10.305Å
Density:
4.56 g/cm3
Melting Point:
998 °C
Transparency Range:
0.53 - 12 µm
Nonlinear-Coefficients:
deff = 31 pm/V

Refractive-Index:
no=2.3466, ne=2.2924 @10.6nm
Damage Threshold:
10MW/cm2 @1064nm 20ns
Absorptance:
<0.06/cm @10.6 µm
Thermal Expansion Coefficient:
⊥ 12.5x10-6/K, ‖ -13.2x10-6/K

Sellmeier Equations of AgGaS2 (λ in μm):

no2 = 3.3970 + 2.3982/(1 - 0.09311/λ2) + 2.1640/(1 – 950/λ2)
ne2 = 3.5873 + 1.9533/(1 - 0.110661/λ2) + 2.3391/(1 – 1030.7/λ2)

More Nonlinear Crystals for Infrared

1. AgGaSe2:
AgGaSe2 crystal has band edges at 0.73 and 18 µm. Its useful transmission range within 0.9-16 µm and wide phase matching capability provide excellent potential for OPO applications when pumped by a variety of currently available lasers. Tuning within 2.5-12 µm has been obtained when pumping by Ho:YLF laser at 2.05 µm; as well as non-critical phase matching (NCPM) operation within 1.9-5.5 µm when pumping at 1.4-1.55 µm. AgGaSe2 (AGSe) has been demonstrated to be an efficient frequency doubling crystal for infrared CO, CO2 lasers radiation.
2. ZnGeP2(ZGP):
ZGP crystal has band edges at 0.74 and 12 µm. Its useful transmission range lies from 1.9 to 10.6 µm. ZnGeP2 has the largest nonlinear optical coefficient and relatively high laser damage threshold. It is successfully used in diverse applications: up-conversion of CO2 laser light to near IR range via mixing with 10.6 µm; sum frequency generation of CO and CO2 laser radiation; efficient SHG of pulsed CO2 and chemical DF-laser; OPO light generation in mid infrared when pumped by erbium and holmium lasers.
3. GaSe:
GaSe crystal has band edges at 0.65 and 18 µm. GaSe has been successfully used for efficient SHG of CO2 laser; SHG of pulsed CO, CO2 and chemical DF-laser (λ = 2.36 µm) radiation; upconversion of CO and CO2 laser radiation into the visible range; infrared pulses generation via difference frequency mixing of neodymium and infrared dye laser; OPG light generation within 3.5-18 µm. Thin GaSe crystal plates are also used for fs THz generation. It is impossible to cut the crystals for certain phase matching angles because of material structure (cleave along [001] plane), which limits the application areas.

Specifications of AgGaS2 Crystal

Dimension Tolerance:
+0/-0.1mm(WxH) and +0.1/-0.2mm thickness
Surface Quality:
10-5 Scratch-dig
Flatness:
<λ/8 @633nm
Chamfer:
0.1mm@45deg.
Clear Aperture:
Central 90% of Diameter
Parallelism:
<10 arc seconds
Perpendicular:
<10 arc minutes
Orientation Angle:
+/-0.25deg.
Damage Threshold:
10MW/cm2@1064nm 20ns
Coating:
Broadband AR coating
AgGaS2 Crystal

i. AgGaS2 Crystal

AgGaS2 crystal Type I 5x5x0.5mm 39°/45° BBAR@1.1-2.6/2.6-11µm
AgGaS2 crystal Type I 8x8x1mm 39°/45° BBAR/BBAR@1.1-2.6/2.6-11µm
AgGaS2 crystal Type II 5x5x20mm 59.5°/0°
AgGaS2 crystal Type I 12x8x15mm 44.3°/45°BBAR@1.06-10µm
AgGaS2 crystal Type I 5x5x0.5mm 63°/45°SFG800nm+6000nm AR@800nm/6000nm

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